MDP06N090 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 60V, 62A, 9.0m(ohm)

MDP06N090
Single N-channel Trench MOSFET 60V, 62A, 9.0mΩ
ㄹ
General Description
The MDP06N090 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDP06N090 is suitable device for Synchronous
Rectification For Server and general purpose applications.
Features
 VDS = 60V
 ID = 62A @VGS = 10V

RDS(ON)
< 9.0 mΩ @VGS = 10V
 100% UIL Tested
D
TO-220
Absolute Maximum Ratings (Ta = 25^oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ⁽¹⁾
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy ⁽²⁾
TC=25^oC
TC=100^oC
TC=25^oC
TC=100^oC
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient ⁽¹⁾
Thermal Resistance, Junction-to-Case
Apr. 2015. Version 1.0
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
Unit
60
V
±20
V
62
40
A
248
70
W
28
84.5
mJ
-55~150
o_C
Symbol
RθJA
RθJC
Rating
62.5
1.8
Unit
o_C/W
MagnaChip Semiconductor Ltd.