MDP06N090 Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 60V, 62A, 9.0m(ohm)

100
V_GS = 10V _8.0V
90
80
6.0V
70
5.0V
60
50
40
4.5V
30
20
4.0V
10
3.5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V_DS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
2.4
2.2
※ Notes :
1. V_GS = 10 V
2.0
2. I_D = 10.0 A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
75
100
125
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
8
7
V_GS = 10V
6
5
4
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100
I_D, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
30
※ Notes :
I_D = 10.0A
25
20
15
10
T_J = 25℃
5
0
2
3
4
5
6
7
8
9
10
V_GS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
100
※ Notes :
90
V_DS = 10V
80
70
60
50
T_J=25℃
40
30
20
10
0
0
1
2
3
4
5
6
7
8
V_GS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
10²
※ Notes :
V_GS = 0V
10¹
10⁰
T =25℃
J
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V_SD, Source-Drain voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Apr. 2015. Version 1.0
3
MagnaChip Semiconductor Ltd.