MDWC0337E Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – Common-Drain Dual N-Channel Trench MOSFET 20V,6.4A,8.3 m(ohm)

10
V = 4.5V
GS
3.8V
3.1V
8
2.5V
2.0V
6
4
2
0
0.00
0.05
0.10
0.15
0.20
V , Source-Source Voltage [V]
SS
Fig.1 On-Region Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T , Junction Temperature (،)ة
J
Fig.3 On-Resistance Variation with
Temperature
5 ^{* Notes :}
V = 5V
SS
4
3
2
1
0
0
1
2
3
V , Gate-Source Voltage [V]
GS
Fig.5 Transfer Characteristics
20
2.0V
15
2.5V
3.1V
10
3.8V
V = 4.5V
GS
5
1
2
3
4
5
6
7
8
9
I , Source Current [A]
S
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
30
* Notes :
I = 2.5A
S
25
20
15
10
5
0
1
2
3
4
V , Gate to Source Volatge [V]
GS
Fig.4 On-Resistance Variation with
Gate to Source Voltage
* Notes :
V = 0V
GS
10
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V , Source-Drain voltage [V]
SD
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
May. 2016. Rev 1.0
3
MagnaChip Semiconductor Ltd.