MDWC0337E Datasheet, PDF (2/6 Pages) MagnaChip Semiconductor. – Common-Drain Dual N-Channel Trench MOSFET 20V,6.4A,8.3 m(ohm)

Ordering Information
Part Number
MDWC0337ERH
Temp. Range
-55~150^oC
Package
WLCSP
Packing
Tape and Reel
Electrical Characteristics (Ta =25^oC unless otherwise noted)
RoHS Status
Halogen Free
Characteristics
Static Characteristics
Source-Source Breakdown Voltage
Gate Threshold Voltage
Cut-Off Current
Gate Leakage Current
Symbol
BVSSS
VGS(th)
ISSS
IGSS
Source-Source Resistance
RSS(ON) ^*3
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Source-Source Diode Forward Voltage
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
VF(S-S)
Test Condition
IS = 500μA, VGS = 0V
VSS = VGS, IS = 1mA
VSS = 20V, VGS = 0V
VGS = ±8V, VSS = 0V
VGS = 4.5V, IS = 2.5A
VGS = 3.8V, IS = 2.5A
VGS = 3.1V, IS = 2.5A
VGS = 2.5V, IS = 2.5A
V_DS = 10V, I_D = 2.5A, V_GS = 4.5V
V = 10V, V = 0V, f = 1MHz
DS
GS
VGS = 4.5V, VDS = 10V,
ID = 5A, RGEN = 3Ω
I = 1.0A, V = 0V
S
GS
Note *1. Mounted on FR4 board “jesd51-7” (76.2mm x 114.3mm x t1.6mm),
*2. t= 10us, Duty Cycle ≤ 1%
*3. Rsson is guaranteed by design, not subject to production testing.
Min
Typ
Max Units
20
-
-
V
0.5
1.0
1.5
-
-
1.0
μA
-
-
10
μA
5.8
8.3
11.9
6.0
8.8
12.9
mΩ
6.2
9.9
15.8
6.5
12.1
22.6
-
28.0
-
-
3.5
-
nC
-
13.0
-
-
1924
-
-
524
-
pF
-
620
-
-
85
-
-
280
-
ns
-
2600
-
-
5850
-
0.40
0.65
1.0
V
May. 2016. Rev 1.0
2
MagnaChip Semiconductor Ltd.