MDWC0337E Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Common-Drain Dual N-Channel Trench MOSFET 20V,6.4A,8.3 m(ohm)

MDWC0337E
Common-Drain Dual N-Channel Trench MOSFET 20V,6.4A,8.3 mΩ
General Description
The MDWC0337E uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance and excellent reliability. Excellent low RSS(ON),
low gate charge operation and operation for Battery
Application.
Features
- VSS = 20V
- Source-Source ON Resistance;
RSS(ON) typ. 8.3mΩ @ VGS = 4.5V
RSS(ON) typ. 8.8mΩ @ VGS = 3.8V
RSS(ON) typ. 9.9mΩ @ VGS = 3.1V
RSS(ON) typ. 12.1mΩ @ VGS = 2.5V
Applications
- Portable Battery Protection Module
Top View
1.88mm*1.88mm WLCSP
1. Source (FET1)
2. Gate(FET1)
3. Gate(FET2)
4. Source(FET2)
Absolute Maximum Ratings (Ta = 25^oC unless otherwise noted)
Characteristics
Source-Source Voltage
Gate-Source Voltage
Source Current
Total Power Dissipation
DC^*1
Pulse^*2
DC^*1
Channel Temperature
Junction and Storage Temperature Range
Symbol
VSSS
VGSS
IS
ISp
PD
Tch
TJ, Tstg
Rating
20
±8
6.4
63
0.8
150
-55~150
Units
V
V
A
A
W
o_C
o_C
Thermal Characteristics
Thermal Resistance
Characteristics
DC^*1
May. 2016. Rev 1.0
Typ.
Max.
1
Symbol
RθJA
Rating
121
157
Unit
o_C/W
o_C/W
MagnaChip Semiconductor Ltd.