MDS1754 Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – N-Channel Trench MOSFET, 40V, 7.6A, 29m(ohm)

25
V_GS = 10V
20
4.5V
4.0V
8V
15
10
3.0V
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
60
50
40
30
V_GS = 4.5V
20
V_GS = 10V
10
5
10
15
20
25
I_D, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
1.5
※ Notes :
1.4
1. V_GS = 10 V
2. I_D = 7.6 A
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-50
-25
0
25
50
75
100
125
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
20
※ Notes :
V_DS = 5V
16
12
T_A=125℃
8
25℃
-55℃
4
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V_GS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
100
80
60
T_A = 125℃
40
20
T_A = 25℃
0
2
4
6
8
10
V_GS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
※ Notes :
V_GS = 0V
10¹
T_A=125℃ _25℃
10⁰
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
August 2008. Version1.0
3
MagnaChip Semiconductor Ltd.