MDS1754 Datasheet, PDF (2/6 Pages) MagnaChip Semiconductor. – N-Channel Trench MOSFET, 40V, 7.6A, 29m(ohm)

Ordering Information
Part Number
MDS1754RH
Temp. Range
-55~150^oC
Package
SOIC-8
Packing
Tape & Reel
Electrical Characteristics (TJ =25^oC unless otherwise noted)
RoHS Status
Halogen Free
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
Test Condition
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gFS
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 32V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 7.6A
VGS = 4.5V, ID = 6.8A
VDS = 10V, ID = 7.6A
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
VDD = 28V, ID = 7.6A, VGS = 10V
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V ,VDD = 20V, ID = 1A,
RGEN=3.3Ω
VSD
IS = 7.6A, VGS = 0V
trr
IS = 7.6A, di/dt=100A/us
Qrr
Min Typ Max Unit
40
-
-
V
1.0 1.8 3.0
-
1
µA
-
-
±0.1
-
22
29
mΩ
28
37
20
-
S
-
9.2
-
-
1.7
-
nC
-
2.2
-
-
440
-
-
38
-
pF
-
76
-
-
5.9
-
-
17.3
-
ns
-
16.5
-
-
10.7
-
-
0.88 1.2
V
-
35
-
ns
-
8.8
-
nC
Notes :
1. Surface mounted RF4 board with 2oz. Copper.
2. Starting TJ=25°C, L=1mH, IAS=6A VDD=20V, VGS=10V
August 2008. Version1.0
2
MagnaChip Semiconductor Ltd.