MDS1754 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – N-Channel Trench MOSFET, 40V, 7.6A, 29m(ohm)

MDS1754
N-Channel Trench MOSFET, 40V, 7.6A, 29mΩ
General Description
The MDS1754 uses advanced MagnaChip’s Trench
MOSFET Technology to provided high performance in
on-state resistance, switching performance and reliability.
Low RDS(ON), Low Gate Charge can be offering superior
benefit in the application.
Features
VDS = 40V
ID = 7.6 (VGS = 10V)
RDS(ON)
< 29mΩ @VGS = 10V
< 37mΩ @ VGS = 4.5V
Applications
Inverters
General purpose applications
5(D)
6(D)
7(D)
8(D)
4(G)
3(S)
2(S)
1(S)
D
G
S
Absolute Maximum Ratings (T_A =25^o unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy
Junction and Storage Temperature Range
(Note 1)
(Note 2)
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
Symbol
RθJA
RθJC
Rating
40
±20
7.6
50
2.5
18
-55~+150
Rating
50
25
Unit
V
V
A
A
W
mJ
o_C
Unit
o_C/W
August 2008. Version1.0
1
MagnaChip Semiconductor Ltd.