MDP18N50 Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 500V, 18.0 A, 0.27(ohm)

100
V_gs=5.5V
=6.0V
=6.5V
10
=7.0V
=8.0V
=10.0V
1
0.1
Notes
1. 250㎲ Pulse Test
2. T_C=25℃
0.01
0.1
1
10
V_DS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
1.8
※ Notes :
1. V = 10 V
1.6
GS
2. I = 5 A
D
1.4
1.2
1.0
V =10V
GS
V_GS=4.5V
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
35
30
25
V_GS=20V
20
V_GS=10.0V
15
10
5
0
1
2
3
4
5
6
7
8
9
I_D,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
1.2
※ Notes :
1. V_GS = 0 V
2. I_D = 250㎂
1.1
1.0
0.9
0.8
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Fig.4 Breakdown Voltage Variation vs.
Temperature
100
* Notes ;
1. V_DS=30V
10
150℃
25℃
1
3
4
5
6
7
8
9
10
V [V]
GS
Fig.5 Transfer Characteristics
Dec.2014. Version 1.2
3
※ Notes :
100
1. V = 0 V
GS
2. I = 250㎂
D
10
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD, Source-Drain Voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.