MDP18N50 Datasheet, PDF (2/6 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 500V, 18.0 A, 0.27(ohm)

Ordering Information
Part Number
MDP18N50TH
Temp. Range
-55~150^oC
Package
TO-220
Packing
Tube
Electrical Characteristics (Ta =25^oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown
Voltage
BVDSS
Gate Threshold Voltage
VGS(th)
Drain Cut-Off Current
IDSS
Gate Leakage Current
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
gfs
Dynamic Characteristics
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
Source-Drain Diode Forward
Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
IS
VSD
trr
Qrr
Test Condition
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 500V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 9A
VDS = 40V, ID = 9A
VDS = 400V, ID = 18A, VGS = 10V⁽³⁾
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 250V, ID = 18A,
RG = 25Ω⁽³⁾
IS = 18A, VGS = 0V
IF = 18A, dl/dt = 100A/μs⁽³⁾
Min Typ Max Unit
500
-
3.0
-
-
V
5.0
-
-
1
μA
-
-
100 nA
0.22 0.27 Ω
-
13
-
S
-
48
-
12
-
15
-
2430
-
10
-
302
-
58
-
74
-
110
-
44
nC
pF
ns
-
18
-
A
-
1.4
V
-
375
ns
-
4.2
μC
Note :
1. Pulse width is based on R θJC & R θJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤9.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=5.3mH, IAS=18.0A, VDD=50V, , Rg =25Ω, Starting TJ=25°C
Dec.2014. Version 1.2
2
MagnaChip Semiconductor Ltd.