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| MDP18N50 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 500V, 18.0 A, 0.27(ohm) | |||
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MDP18N50
N-Channel MOSFET 500V, 18.0 A, 0.27â¦
General Description
The MDP18N50 uses advanced Magnachipâs
MOSFET Technology, which provides low on-
state resistance, high switching performance
and excellent quality.
MDP18N50 is suitable device for SMPS, HID
and general purpose applications.
Features
ï® VDS = 500V
ï® ID = 18.0A @VGS = 10V
ï® RDS(ON) < 0.27Ω @VGS = 10V
Applications
ï® Power Supply
ï® HID
ï® Lighting
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Dec.2014. Version 1.2
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
Dv/dt
EAS
TJ, Tstg
Rating
500
±30
18
11
72
236
1.89
4.5
950
-55~150
Unit
V
V
A
A
72
W
W/ oC
V/ns
mJ
oC
Symbol
RθJA
RθJC
Rating
62.5
0.53
Unit
oC/W
1
MagnaChip Semiconductor Ltd.
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