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TH8055 Datasheet, PDF (7/20 Pages) Micro Electronics – Single Wire CAN Transceiver
TH8055
Single Wire CAN Transceiver
3. Electrical Specification
All voltages are referenced to ground (GND). Positive currents flow into the IC. The absolute maximum
ratings given in the table below are limiting values that do not lead to a permanent damage of the device but
exceeding any of these limits may do so. Long term exposure to limiting values may affect the reliability of
the device. Reliable operation of the TH8055 is only specified within the limits shown in ”Operating
conditions”.
3.1 Operating Conditions
Parameter
Battery voltage
Operating ambient temperature
Junction temperature
Symbol
Min
Max
Unit
VBAT
5.0
18
V
TA
-40
125
°C
TJ
-40
150
°C
3.2 Absolute Maximum Ratings
Parameter
Supply voltage
Short-term supply voltage
Transient supply voltage
Transient supply voltage
Transient supply voltage
CANH voltage
Transient bus voltage
Transient bus voltage
Transient bus voltage
DC voltage on pin LOAD
DC voltage on pins TxD,MODE1,MODE0,RxD
ESD capability of CANH
ESD capability of any other pins
Maximum latch-up free current at any Pin
Maximum power dissipation
Thermal impedance
Storage temperature
Junction temperature
Symbol
VBAT
VBAT.LD
VBAT.TR1
VBAT.TR2
VBAT.TR3
VCANH
VCANHTR1
VCANHTR2
VCANHTR3
VLOAD
VDC
VESDBUS
VESD
ILATCH
Ptot
ΘJA
TSTG
TJ
Condition
Load dump; t<500ms
Jump start; t<1 min
ISO 7637/1 pulse 1 [1]
ISO 7637/1 pulses 2 [1]
ISO 7637/1 pulses 3A, 3B
VBAT<= 27V
VBAT = 0V
ISO 7637/1 pulse 1 [2]
ISO 7637/1 pulses 2 [2]
ISO 7637/1 pulses 3A, 3B [2]
via RT > 2kΩ
Human body model
Eq. to discharge 100pF with
1.5kΩ
Human body model
Eq. to discharge 100pF with
1.5kΩ
At TA = 125 °C
in free air
Min
-0.3
-50
-200
-20
-40
-50
-200
-40
-0.3
-4000
-2000
-500
-55
-40
Max Unit
18
V
40
V
27
V
100
V
200
V
40
V
V
100
V
200
V
40
V
7
V
4000 V
2000 V
500 mA
197 [3] mW
152 K/W
150 °C
150 °C
[1] ISO 7637 test pulses are applied to VBAT via a reverse polarity diode and >1uF blocking capacitor .
[2] ISO 7637 test pulses are applied to CANH via a coupling capacitance of 1 nF.
[3] The application board shall be realized with a ground copper foil area > 200mm2 .
TH8055 - Datasheet
3901008055
Page 7 of 20
May 2004
Rev 005