2N3906 Datasheet, PDF (3/4 Pages) NXP Semiconductors – PNP switching transistor

2N3906
Maximum Power Dissipation vs
Ambient Temperature
800
600
PD(MAX) - (mW)
400
TO-92
200
SOT-23
0
0
50
100
150
200
TA - (°C)
Contours of Constant Gain
Bandwidth Product (fT)
24
20
16
VCE - (V) ₁₂
8
4
0
0.1
1.0
10
100
IC - (mA)
*100MHz increments from 100
to 700, 750 and 800MHz
Noise Figure vs
Frequency
6
5
VCE = 5.0V
4
NF - (dB) ₃
IC = 100µA RS = 200Ω
2
1
0
0.1
IC = 1.0mA RS = 200Ω
IC = 100µA RS = 2.0kΩ
1.0
10
100
f - (kHz)
MCC
Noise Figure vs
Source Resistance
12
10
VCE = 5.0V
f = 1.0kHz
NF - (dB)
8 ^{IC = 1.0mA}
6
IC = 100µA
4
2
0
0.1
1.0
10
100
RS - (kΩ)
Current Gain
1000
VCE = 10V
f = 1.0kHz
hfe ₁₀₀
10
0.1
1.0
10
IC - (mA)
Switching Times vs
Collector Current
1000
IB1 = IB2 = IC/10
100
T - (ns)
ts
tf
10
1.0
1.0
10
IC - (mA)
tr
td
100
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