2N3906 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP switching transistor

MCC

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2N3906
Features
• Through Hole Package
• Capable of 600mWatts of Power Dissipation
Pin Configuration
Bottom View
CB E
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min
Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
40
Vdc
(IC=1.0mAdc, IB=0)
V(BR)CBO
Collector-Base Breakdown Voltage
40
Vdc
(IC=10µAdc, IE=0)
V(BR)EBO
Emitter-Base Breakdown Voltage
5.0
Vdc
(IE=10µAdc, IC=0)
IBL
Base Cutoff Current
50
nAdc
(VCE=30Vdc, VBE=3.0Vdc)
ICEX
Collector Cutoff Current
50
nAdc
(VCE=30Vdc, VBE=3.0Vdc)
ON CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
DC Current Gain*
(IC=0.1mAdc, VCE=1.0Vdc)
(IC=1.0mAdc, VCE=1.0Vdc)
(IC=10mAdc, VCE=1.0Vdc)
(IC=50mAdc, VCE=1.0Vdc)
(IC=100mAdc, VCE=1.0Vdc)
Collector-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
(IC=50mAdc, IB=5.0mAdc)
Base-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
(IC=50mAdc, IB=5.0mAdc)
60
80
100
300
60
30
0.25
Vdc
0.4
0.65
0.85
Vdc
0.95
SMALL-SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
(IC=10mAdc, VCE=20Vdc, f=100MHz)
250
MHz
Cobo
Output Capacitance
(VCB=5.0Vdec, IE=0, f=100MHz)
4.5
pF
Cibo
Input Capacitance
(VBE=0.5Vdc, IC=0, f=100kHz)
10.0
pF
NF
Noise Figure
(IC=100µAdc, VCE=5.0Vdc, RS=1.0kΩ
4.0
dB
f=10Hz to 15.7kHz)
SWITCHING CHARACTERISTICS
td
Delay Time
(VCC=3.0Vdc, VBE=0.5Vdc
tr
Rise Time
IC=10mAdc, IB1=1.0mAdc)
ts
Storage Time (VCC=3.0Vdc, IC=10mAdc
tf
Fall Time
IB1=IB2=1.0mAdc)
*Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
35
ns
35
ns
225
ns
75
ns
PNP General
Purpose Amplifier
TO-92
A
E
B
C
D
G
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.175
.185
B
.175
.185
C
.500
---
D
.016
.020
E
.135
.145
G
.095
.105
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
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