2N3906 Datasheet, PDF (2/4 Pages) NXP Semiconductors – PNP switching transistor

2N3906
DC Current Gain vs Collector Current
220
VCE = 1.0V
200
160
hFE
120
80
40
0.1
1
10
100
IC (mA)
Collector-Emitter Saturation
Volatge vs Collector Current
0.6
IC/IB = 10
0.5
TA = 25°C
0.4
VCE(SAT) - (V) _0.3
0.2
0.1
0
1.0
10
100
1000
IC - (mA)
Collector-Base Diode Reverse
Current vs Temperature
100
VCB = 20V
10
ICBO - (mA)
1.0
0.1
0
25 50 75 100 125 150
TJ - (°C)
MCC
Base-Emitter ON Voltage vs
Collector Current
1.2
VCE = 5.0V
1.0 _{TA = 25°C}
0.8
VBE(ON) - (V)
0.6
0.4 ^{TA = 100°C}
0.2
0
0.1
1.0
10
100
IC - (mA)
Base-Emitter Saturation
Voltage vs Collector Current
1.4
IC/IB = 10
TA = 25°C
1.2
1.0
VBE(SAT) - (V) _0.8
0.6
0.4
0.2
1.0
10
100
IC - (mA)
1000
Common Base Open Circuit Input and
Output Capacitance vs Reverse Bias Voltage
1.0 _COBO
TA = 25°C
TO-92
8
6
pF
4
2
0
0.1
CIBO
1.0
10
Volts - (V)
www.mccsemi.com