DS1743 Datasheet, PDF (9/16 Pages) Dallas Semiconductor – Y2KC Nonvolatile Timekeeping RAM

DS1743/DS1743P Y2K-Compliant, Nonvolatile Timekeeping RAMs
DC ELECTRICAL CHARACTERISTICS (3.3V)
(V_CC = 3.3V ±10%, T_A = Over the Operating Range.)
PARAMETER
SYMBOL MIN
Active Supply Current
TTL Standby Current (CE = V_IH)
CMOS Standby Current
(CE ≥ V_CC - 0.2V;
CE2 = GND + 0.2V)
Input Leakage Current
(Any Input)
Output Leakage Current
(Any Output)
Output Logic 1 Voltage
(I_OUT = -1.0mA)
Output Logic 0 Voltage
(I_OUT =2.1mA)
Write-Protection Voltage
I_CC
I_CC1
I_CC2
I_IL
I_OL
V_OH
V_OL1
V_PF
-1
-1
2.4
2.75
Battery Switchover Voltage
V_SO
TYP
10
0.7
0.7
V_BAT
or
V_PF
MAX
30
2
2
+1
+1
UNITS
mA
mA
mA
μA
μA
0.4
2.97
V
V
NOTES
2, 3
2, 3
2, 3
1
1
1
1, 4
AC CHARACTERISTICS—READ CYCLE (5V)
(V_CC = 5.0V ±10%, T_A = Over the Operating Range.)
ACCESS
PARAMETER
SYMBOL
70ns
85ns
MIN MAX MIN MAX
Read Cycle Time
t_RC
70
85
Address Access Time
t_AA
CE to CE2 to DQ Low-Z
t_CEL
CE Access Time
t_CEA
70
85
5
5
70
85
CE2 Access Time
CE and CE2 Data-Off
Time
OE to DQ Low-Z
OE Access Time
OE Data-Off Time
Output Hold from
Address
t_CE2A
t_CEZ
t_OEL
t_OEA
t_OEZ
t_OH
80
95
25
30
5
5
35
45
25
30
5
5
100ns
MIN MAX
100
100
5
100
105
35
5
55
35
5
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
5
5
5
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