MAX15035 Datasheet, PDF (5/27 Pages) Maxim Integrated Products – 15A Step-Down Regulator with Internal Switches

15A Step-Down Regulator with Internal Switches
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 1, V_IN = 12V, V_DD = V_CC = V_EN = 5V, REFIN = ILIM = REF, SKIP = GND. T_A = -40°C to +85°C, unless otherwise
specified.) (Note 1)
PARAMETER
REFERENCE
Reference Voltage
FAULT DETECTION
Output Overvoltage-Protection
Trip Threshold
Output Undervoltage-Protection
Trip Threshold
SYMBOL
CONDITIONS
V_REF V_DD = 4.5V to 5.5V
OVP
UVP
With respect to the internal target voltage
(error comparator threshold) rising edge;
hysteresis = 50mV
With respect to the internal target voltage
(error comparator threshold);
falling edge; hysteresis = 50mV
MIN
1.985
250
-240
MAX UNITS
2.015
V
350
mV
-160
mV
Output Undervoltage
Fault-Propagation Delay
t_UVP FB forced 25mV below trip threshold
80
400
µs
PGOOD Output-Low Voltage
V_CC Undervoltage Lockout
Threshold
I_SINK = 3mA
V _{U V L O( V C C )}
Rising edge, PWM disabled below this level,
hysteresis = 100mV
3.95
0.4
V
4.45
V
CURRENT LIMIT
ILIM Input Range
Current-Limit Threshold
Ultrasonic Frequency
INPUTS AND OUTPUTS
EN Logic-Input Threshold
SKIP Quad-Level Input
Logic Levels
0.4
V_ILIMIT
V_ILIM = 0.4V, V_GND = V_LX
ILIM = REF (2.0V), V_GND - V_LX
17
90
SKIP = open (3.3V), V_FB = V_REFIN + 50mV
17
V_EN
V _SKIP
EN rising edge hysteresis = 450mV (typ)
High (5V V_DD)
Mid (3.3V)
Ref (2.0V)
Low (GND)
1.20
V_CC -
0.4
3.0
1.7
V_REF
V
23
mV
110
kHz
2.20
V
3.6
V
2.3
0.4
Note 1: Limits are 100% production tested at T_A = +25°C. Maximum and minimum limits over temperature are guaranteed by
design and characterization.
Note 2: The 0 to 0.5V range is guaranteed by design, not production tested.
Note 3: On-time and off-time specifications are measured from 50% point to 50% point at the unloaded LX node. The typical 25ns
dead time that occurs between the high-side driver falling edge (high-side MOSFET turn-off) and the low-side MOSFET turn-
on) is included in the on-time measurement. Similarly, the typical 25ns dead time that occurs between the low-side driver
falling edge (low-side MOSFET turn-off) and the high-side driver rising edge (high-side MOSFET turn-on) is included in the
off-time measurement.
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