MAX15012_07 Datasheet, PDF (4/18 Pages) Maxim Integrated Products – 175V/2A, High-Speed, Half-Bridge MOSFET Drivers

175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
ELECTRICAL CHARACTERISTICS (continued)
(V_DD = V_BST = +8V to +12.6V, V_HS = GND = 0V, T_A = T_J = -40°C to +125°C, unless otherwise noted. Typical values are at V_DD =
V_BST = +12V and T_A = +25°C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
SWITCHING CHARACTERISTICS FOR HIGH- AND LOW-SIDE DRIVERS (V_DD = V_BST = +12V)
C_L = 1000pF
Rise Time
t_R
C_L = 5000pF
C_L = 10,000pF
C_L = 1000pF
Fall Time
t_F
C_L = 5000pF
C_L = 10,000pF
Turn-On Propagation Delay Time
t_{D_ON}
Figure 1, C_L = 1000pF
(Note 5)
CMOS
TTL
Turn-Off Propagation Delay Time
t_{D_OFF}
Figure 1, C_L = 1000pF
(Note 5)
CMOS
TTL
Delay Matching Between Driver-
Low and Driver-High
t_MATCH C_L = 1000pF, Figure 1 (Note 5)
Internal Nonoverlap
Minimum Pulse Width Input Logic
(Note 6)
t_PW-min
V_DD = V_BST = 12V
V_DD = V_BST = 8V
TYP MAX UNITS
7
33
ns
65
7
33
ns
65
30
55
ns
35
63
30
55
ns
35
63
2
8
ns
1
ns
135
ns
170
Note 2: All devices are 100% tested at T_A = +125°C. Limits over temperature are guaranteed by design.
Note 3: Ensure that the V_DD-to-GND or BST-to-HS transient voltage does not exceed 13.2V.
Note 4: Maximum operating supply voltage (V_DD) reduces linearly from 12.6V to 10.5V with its maximum voltage (V_{HS_MAX}) increasing
from 125V to 175V. See the Typical Operating Characteristics and Applications Information sections.
Note 5: Guaranteed by design, not production tested.
Note 6: See the Minimum Input Pulse Width section.
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