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| MAX15012_07 Datasheet, PDF (2/18 Pages) Maxim Integrated Products – 175V/2A, High-Speed, Half-Bridge MOSFET Drivers | |||
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175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
ABSOLUTE MAXIMUM RATINGS
(All voltages referenced to GND, unless otherwise noted.)
VDD, IN_H, IN_L......................................................-0.3V to +14V
DL ...............................................................-0.3V to (VDD + 0.3V)
HS............................................................................-5V to +180V
DH to HS.....................................................-0.3V to (VDD + 0.3V)
BST to HS ...............................................................-0.3V to +14V
dV/dt at HS ........................................................................50V/ns
Continuous Power Dissipation (TA = +70°C)
8-Pin SO (derate 5.9mW/°C above +70°C)...............470.6mW
8-Pin SO-EP (derate 19.2mW/°C above +70°C) .....1538.5mW
Junction-to-Case Thermal Resistance (θJC)(Note 1)
8-Pin SO .......................................................................40°C/W
8-Pin SO-EP....................................................................6°C/W
Junction-to-Ambient Thermal Resistance (θJA)(Note 1)
8-Pin SO .....................................................................170°C/W
8-Pin SO-EP..................................................................52°C/W
Maximum Junction Temperature .....................................+150°C
Operating Temperature Range .........................-40°C to +125°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
*Per JEDEC 51 Standard Multilayer board.
Stresses beyond those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JE5D51-7, using a four-
layer board. For detailed information on package thermal considerations, see www.maxim-ic.com/thermal-tutorial.
ELECTRICAL CHARACTERISTICS
(VDD = VBST = +8V to +12.6V, VHS = GND = 0V, TA = TJ = -40°C to +125°C, unless otherwise noted. Typical values are at VDD =
VBST = +12V and TA = +25°C.) (Note 2)
PARAMETER
POWER SUPPLIES
Operating Supply Voltage
VDD Quiescent Supply Current
(No Switching)
VDD Operating Supply Current
BST Quiescent Supply Current
BST Operating Supply Current
UVLO (VDD to GND)
UVLO (BST to HS)
UVLO Hysteresis
LOGIC INPUT
Input-Logic High
Input-Logic Low
Logic-Input Hysteresis
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
VDD (Notes 3 and 4)
8.0
12.6
V
IDD
IN_H = IN_L = GND (for A/C versions),
IN_H = GND, IN_L = VDD (for B/D versions)
70
140
µA
IDDO fSW = 500kHz, VDD = +12V
3
mA
IBST
IN_H = IN_L = GND (for A/C versions),
IN_H = GND, IN_L = VDD (for B/D versions)
15
40
µA
IBSTO fSW = 500kHz, VDD = VBST = +12V
UVLOVDD VDD rising
3
mA
6.5
7.3
8.0
V
UVLOBST BST rising
6.0
6.9
7.8
V
0.5
V
VIH_
VIL_
VHYS
MAX15012_, CMOS (VDD/2) version
MAX15013_, TTL version
MAX15012_, CMOS (VDD/2) version
MAX15013_, TTL version
MAX15012_, CMOS (VDD/2) version
MAX15013_, TTL version
0.67 x 0.55 x
VDD
VDD
V
2
1.65
0.4 x 0.33 x
VDD
VDD
V
1.4
0.8
1.6
V
0.25
2 _______________________________________________________________________________________
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