MAX1185_10 Datasheet, PDF (4/21 Pages) Maxim Integrated Products – Dual 10-Bit, 20Msps, 3V, Low-Power ADC with Internal Reference and Multiplexed Parallel Outputs

Dual 10-Bit, 20Msps, 3V, Low-Power ADC with
Internal Reference and Multiplexed Parallel Outputs
ELECTRICAL CHARACTERISTICS (continued)
(V_DD = 3V, OV_DD = 2.5V, 0.1µF and 1µF capacitors from REFP, REFN, and COM to GND; REFOUT connected to REFIN through a
10kΩ resistor, V_IN = 2Vp-p (differential w.r.t. COM), C_L = 10pF at digital outputs (Note 1), f_CLK = 20MHz, T_A = T_MIN to T_MAX, unless
otherwise noted. Typical values are at T_A = +25°C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Maximum REFP, COM Source
Current
I_SOURCE
5
mA
Maximum REFP, COM Sink
Current
I_SINK
-250
µA
Maximum REFN Source Current I_SOURCE
250
µA
Maximum REFN Sink Current
I_SINK
-5
mA
UNBUFFERED EXTERNAL REFERENCE (V_REFIN = AGND, reference voltage applied to REFP, REFN, and COM)
REFP, REFN Input Resistance
R_REFP, Measured between REFP and COM, and
R_REFN REFN and COM
4
kΩ
Differential Reference Input
Voltage
∆V_REF ∆V_REF = V_REFP - V_REFN
1.024
V
±10%
COM Input Voltage
V_COM
V_DD / 2
V
±10%
REFP Input Voltage
V_REFP
REFN Input Voltage
V_REFN
DIGITAL INPUTS (CLK, PD, OE, SLEEP, T/B)
Input High Threshold
CLK
V_IH
PD, OE, SLEEP, T/B
Input Low Threshold
CLK
V_IL
PD, OE, SLEEP, T/B
Input Hysteresis
V_HYST
Input Leakage
I_IH
I_IL
Input Capacitance
C_IN
DIGITAL OUTPUTS (D0A/B–D9A/B, A/B)
Output-Voltage Low
V_OL
V_IH = OV_DD or V_DD (CLK)
V_IL = 0
I_SINK = -200µA
Output-Voltage High
Three-State Leakage Current
Three-State Output Capacitance
V_OH
I_LEAK
C_OUT
I_SOURCE = 200µA
OE = OV_DD
OE = OV_DD
V_COM +
∆V_REF / 2
V
V_COM -
∆V_REF / 2
V
0.8
✕ V_DD
V
0.8
✕ OV_DD
0.2
✕ V_DD
V
0.2
✕ OV_DD
0.1
V
±5
µA
±5
5
pF
OV_DD
- 0.2
5
0.2
V
V
±10
µA
pF
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