MAX1182 Datasheet, PDF (4/21 Pages) Maxim Integrated Products – Dual 10-Bit, 65Msps, +3V, Low-Power ADC with Internal Reference and Parallel Outputs

Dual 10-Bit, 65Msps, +3V, Low-Power ADC with
Internal Reference and Parallel Outputs
ELECTRICAL CHARACTERISTICS (continued)
(V_DD = +3V, OV_DD = +2.5V; 0.1µF and 1.0µF capacitors from REFP, REFN, and COM to GND; REFOUT connected to REFIN through
a 10kΩ resistor, V_IN = 2Vp-p (differential w.r.t. COM), C_L = 10pF at digital outputs (Note 5), f_CLK = 65MHz (50% duty cycle),
T_A = T_MIN to T_MAX, unless otherwise noted. Typical values are at T_A = +25°C.)
PARAMETER
Maximum REFP, COM Source
Current
SYMBOL
I_SOURCE
CONDITIONS
MIN TYP MAX UNITS
>5
mA
Maximum REFP, COM Sink
Current
I_SINK
250
µA
Maximum REFN Source Current I_SOURCE
250
µA
Maximum REFN Sink Current
I_SINK
>5
mA
UNBUFFERED EXTERNAL REFERENCE ^(VREFIN ^{= AGND, reference voltage applied to REFP, REFN, and COM)}
REFP, REFN Input Resistance
R_REFP, Measured between REFP and COM, and
R_REFN REFN and COM
4
kΩ
Differential Reference Input
Voltage
∆V_REF ∆V_REF = V_REFP – V_REFN
1.024
±10%
V
COM Input Voltage
V_COM
VDD/2
V
± 10%
REFP Input Voltage
V_REFP
REFN Input Voltage
V_REFN
DIGITAL INPUTS (CLK, PD, ^OE, SLEEP, T/B)
Input High Threshold
CLK
V_IH
PD, OE, SLEEP, T/B
Input Low Threshold
CLK
V_IL
PD, OE, SLEEP, T/B
Input Hysteresis
V_HYST
Input Leakage
I_IH
V_IH = OV_DD or V_DD (CLK)
I_IL
V_IL = 0
Input Capacitance
C_IN
DIGITAL OUTPUTS (D9A–D0A, D9B–D0B)
Output Voltage Low
V_OL I_SINK = 200µA
Output Voltage High
Three-State Leakage Current
Three-State Output Capacitance
V_OH
I_LEAK
C_OUT
I_SOURCE = 200µA
OE = OV_DD
OE = OV_DD
V_COM +
V
∆V_REF /2
V_COM -
∆V_REF /2
V
0.8 x V_DD
V
0.8 x OV_DD
0 2 x V_{DD V}
0 2 x OV_DD
0.1
V
±5
µA
±5
5
pF
OV_DD - 0.2
5
0.2
V
V
±10
µA
pF
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