MAX11321 Datasheet, PDF (2/37 Pages) Maxim Integrated Products – 1Msps, 10-/12-Bit, 4-/8-/16-Channel ADCs with Post-Mux External Signal Conditioning Access

MAX11321–MAX11328
1Msps, 10-/12-Bit, 4-/8-/16-Channel ADCs with
Post-Mux External Signal Conditioning Access
ABSOLUTE MAXIMUM RATINGS
V_DD to GND..............................................................-0.3V to +4V
AOP, AON, AIP, AIN, OVDD, AIN0–AIN13, CNVST/AIN14, REF+,
REF-/AIN15 to GND........................................ -0.3V to the lower of
(V_DD + 0.3V) and +4V
CS, SCLK, DIN, DOUT, EOC TO GND........-0.3V to the lower of
(V_OVDD + 0.3V) and +4V
DGND to GND.......................................................-0.3V to +0.3V
Continuous Power Dissipation (T_A = +70NC)
TQFN (derate 34.4mW/NC above +70NC)..................2758mW
Operating Temperature Range......................... -40NC to +125NC
Junction Temperature......................................................+150NC
Storage Temperature Range............................. -65NC to +150NC
Lead Temperature (soldering, 10s).................................+300NC
Soldering Temperature (reflow).......................................+260NC
Input/Output Current (all pins)............................................50mA
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
TQFN
Junction-to-Ambient Thermal Resistance (B_JA)............29NC/W
Junction-to-Case Thermal Resistance (B_JC)................1.7NC/W
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.
ELECTRICAL CHARACTERISTICS (MAX11322/MAX11325/MAX11328)
(V_DD = 2.35V to 3.6V, V_OVDD = 1.5V to 3.6V, f_SAMPLE = 1Msps, f_SCLK = 16MHz, 50% duty cycle, V_REF+ = V_DD, T_A = -40NC to +125NC,
unless otherwise noted. Typical values are at T_A = +25NC.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
DC ACCURACY (Notes 3 and 4)
Resolution
RES 12 bit
Integral Nonlinearity
INL
Differential Nonlinearity
DNL No missing codes
Offset Error
Gain Error
(Note 5)
Offset Error Temperature Coefficient
OE_TC
Gain Temperature Coefficient
Channel-to-Channel Offset Matching
GE_TC
Line Rejection
PSR (Note 6)
DYNAMIC PERFORMANCE (100kHz, Input Sine Wave) (Notes 3 and 7)
Signal-to-Noise Plus Distortion
SINAD
Signal-to-Noise Ratio
SNR
Total Harmonic Distortion
(Up to the 5th Harmonic)
THD
Spurious-Free Dynamic Range
SFDR
Intermodulation Distortion
Full-Power Bandwidth
IMD
f₁ = 99.2432kHz, f₂ = 69.2139kHz
-3dB
-0.1dB
Full-Linear Bandwidth
SINAD ≥ 70dB
MIN TYP MAX UNITS
12
Bits
Q1.0 LSB
Q1.0 LSB
1.2 Q3.0 LSB
0.02 Q5.5 LSB
Q2
ppm/NC
Q0.8
ppm/NC
Q0.5
LSB
0.3
Q2 LSB/V
70
71.9
dB
70
72.3
dB
-83
-76
dB
77
84
-85
30
5
0.5
dB
dB
MHz
MHz
Maxim Integrated
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