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MAX16928_12 Datasheet, PDF (15/20 Pages) Maxim Integrated Products – Automotive TFT-LCD Power Supply with Boost Converter and Gate Voltage Regulators | |||
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MAX16928
Automotive TFT-LCD Power Supply with Boost
Converter and Gate Voltage Regulators
RTOP greater than 20kI to avoid loading down the ref-
erence output. Calculate RBOTTOM with the following
equation:
RBOTTOM
=
R TOP
Ã
VFBGL
VREF â
â VGL
VFBGL
where VGL is the desired output voltage, VREF = 1.25V,
and VFBGL = 0.25V (the regulated feedback voltage of
the regulator).
Pass Transistor Selection
The pass transistor must meet specifications for current
gain (hFE), input capacitance, collector-emitter saturation
voltage, and power dissipation. The transistorâs current
gain limits the guaranteed maximum output current to:
ILOAD(MAX)
=
(IDRVN
â
VBE
RBE
)
Ã
hFE(MIN)
where IDRVN is the minimum guaranteed base-drive cur-
rent, VBE is the transistorâs base-to-emitter forward volt-
age drop, and RBE is the pulldown resistor connected
between the transistorâs base and emitter. Furthermore,
the transistorâs current gain increases the regulatorâs DC
loop gain (see the Stability Requirements section), so
excessive gain destabilizes the output.
The transistorâs saturation voltage at the maximum output
current determines the minimum input-to-output volt-
age differential that the regulator can support. Also, the
packageâs power dissipation limits the usable maximum
input-to-output voltage differential. The maximum power-
dissipation capability of the transistorâs package and
mounting must exceed the actual power dissipated in
the device. The power dissipated equals the maximum
load current (ILOAD(MAX)_GL) multiplied by the maximum
input-to-output voltage differential:
PNPN_GL = (VGL - VCN) Ã ILOAD(MAX)
where VGL is the regulated output voltage on the collec-
tor of the transistor, VCN is the inverting charge-pump
output voltage applied to the emitter of the transistor, and
ILOAD(MAX) is the maximum load current. Note that the
external transistor is not short circuit protected.
Stability Requirements
The deviceâs negative-gate voltage regulator uses an
internal transconductance amplifier to drive an external
pass transistor. The transconductance amplifier, the
pass transistor, the base-emitter resistor, and the output
capacitor determine the loop stability.
The transconductance amplifier regulates the output volt-
age by controlling the pass transistorâs base current. The
total DC loop gain is approximately:
A V_GL
â
(4
VT
)Ã
(1+
IBIAS Ã hFE
ILOAD
)
Ã
VREF
where VT is 26mV at room temperature, and IBIAS is the
current through the base-to-emitter resistor (RBE). For
the device, the bias current for the negative-gate voltage
regulator is 0.1mA. Therefore, the base-to-emitter resistor
should be chosen to set 0.1mA bias current:
RBE
=
VBE
0.1mA
=
0.7V
0.1mA
=
7kâ¦
Use the closest standard resistor value of 6.8kI. The
output capacitor and the load resistance create the
dominant pole in the system. However, the internal
amplifier delay, pass transistorâs input capacitance,
and the stray capacitance at the feedback node create
additional poles in the system, and the output capacitorâs
ESR generates a zero. For proper operation, use the fol-
lowing procedure to verify that the regulator is properly
compensated:
1) First, determine the dominant pole set by the regula-
torâs output capacitor and the load resistor:
fPOLE_GL
=
ILOAD(MAX)_GL
2Ï Ã COUT_GL Ã VOUT_GL
The unity-gain crossover frequency of the regulator is:
fCROSSOVER = AV_LR Ã fPOLE_LR
2) The pole created by the internal amplifier delay is
approximately 1MHz:
fPOLE_AMP = 1MHz
3) Next, calculate the pole set by the transistorâs input
capacitance, the transistorâs input resistance, and the
base-to-emitter pullup resistor:
fPOLE_IN
=
2Ï
Ã
CIN
1
à (RBE
/RIN)
where:
CIN
=
gm
2ÏfT
,
RIN
=
hFE
gm
gm is the transconductance of the pass transistor, and
fT is the transition frequency. Both parameters can be
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