MRF171A Datasheet, PDF (6/12 Pages) Tyco Electronics – MOSFET BROADBAND RF POWER FET

TYPICAL CHARACTERISTICS
3.0
VDS = 10 V
2.5 TYPICAL DEVICE SHOWN,
VGS(th) = 2.5 V
2.0
1.5
1.0
0.5
0.0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 9. Drain Current versus Gate Voltage
(Transfer Characteristics)
45
40 ^{Pin = CONSTANT}
35
VDD = 28 V
IDQ = 25 mA
30 ^{f = 150 MHz}
TYPICAL DEVICE SHOWN,
25 VGS(th) = 2.5 V
20
15
10
5
0
–1.0 –0.5
0
0.5
1.0
1.5
2.0
2.5
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 10. Output Power versus Gate Voltage
1000
100
Coss
Ciss
Crss
10
VGS = 0 V
f = 1 MHz
1
0
5
10
15
20
25
30
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 11. Capacitance versus Drain–Source Voltage
REV 2
6