MRF171A Datasheet, PDF (1/12 Pages) Tyco Electronics – MOSFET BROADBAND RF POWER FET

SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode MOSFET
Designed primarily for wideband large–signal output and driver stages from
30–200 MHz.
• Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 45 Watts
Power Gain = 17 dB (Min)
Efficiency = 60% (Min)
• Excellent Thermal Stability, Ideally Suited for Class A Operation
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 100% Tested for Load Mismatch At All Phase Angles with 30:1 VSWR
• Low Crss – 8 pF @ VDS = 28 V
D
• Gold Top Metal
Typical Data For Power Amplifier Applications in Industrial,
Commercial and Amateur Radio Equipment
• Typical Performance at 30 MHz, 28 Vdc
G
Output Power = 30 Watts (PEP)
Power Gain = 20 dB (Typ)
S
Efficiency = 50% (Typ)
IMD(d3) (30 Watts PEP) –32 dB (Typ)
Order this document
by MRF171A/D
MRF171A
45 W, 150 MHz
MOSFET BROADBAND
RF POWER FET
CASE 211–07, STYLE 2
MAXIMUM RATINGS
Drain–Gate Voltage
Rating
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(ID = 50 mA, VGS = 0)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 28 V)
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
V(BR)DSS
IDSS
IGSS
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Symbol
R_θJC
Min
65
—
—
Value
65
65
± 20
4.5
115
0.66
– 65 to +150
200
Max
1.52
Typ
Max
80
—
—
1.0
—
1.0
Unit
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
Unit
Vdc
mAdc
µAdc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
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