MRF171A Datasheet, PDF (2/12 Pages) Tyco Electronics – MOSFET BROADBAND RF POWER FET

ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 V, ID = 50 mA)
Drain–Source On–Voltage
(VGS = 10 V, ID = 3 A)
Forward Transconductance
(VDS = 10 V, ID = 2 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(VDD = 28 V, Pout = 45 W, f = 150 MHz, IDQ = 25 mA)
Drain Efficiency
(VDD = 28 V, Pout = 45 W, f = 150 MHz, IDQ = 25 mA)
Electrical Ruggedness
(VDD = 28 V, Pout = 45 W, f = 150 MHz, IDQ = 25 mA,
VSWR 30:1 at All Phase Angles)
VGS(th)
1.5
2.5
4.5
Vdc
VDS(on)
—
1.0
—
V
gfs
1.4
1.8
—
mhos
Ciss
—
60
—
pF
Coss
—
70
—
pF
Crss
—
8
—
pF
Gps
17
19.5
—
dB
η
60
70
—
%
No Degradation in Output Power
TYPICAL FUNCTIONAL TESTS (SSB)
Common Source Power Gain
(VDD = 28 V, Pout = 30 W (PEP), IDQ = 100 mA,
f = 30; 30.001 MHz)
Drain Efficiency
(VDD = 28 V, Pout = 30 W (PEP), IDQ = 100 mA,
f = 30; 30.001 MHz)
Gps
—
20
—
dB
η
—
50
—
%
Intermodulation Distortion
(VDD = 28 V, Pout = 30 W (PEP), IDQ = 100 mA,
f = 30; 30.001 MHz)
IMD(d3)
—
–32
—
dB
REV 2
2