MRF160 Datasheet, PDF (5/9 Pages) Motorola, Inc – MOSFET BROADBAND RF POWER FET

TYPICAL CHARACTERISTICS
7
f = 500 MHz
6 IDQ = 50 mA
5
6
f = 500 MHz
IDQ = 50 mA
Pin = 150 mW
75 mW
4
4
50 mW
3
2
2
25 mW
1
0
0
0
40
80
120
160
200
12
16
20
24
28
Pin, INPUT POWER (mW)
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 3. Output Power versus Input Power
Figure 4. Output Power versus Voltage
4.0
3.6 _{f = 500 MHz}
3.2 VDS = 28 V
2.8 ^{IDQ = 50 mA}
Pin = Constant
2.4
2.0
1.6
1.2
0.8
0.4
0
0
0.5
1
1.5
2
2.5
3
3.5
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 5. Output Power versus Gate Voltage
32
28
f = 1.0 MHz
VGS = 0 V
24
20
16
12
Coss
8
Ciss
4
Crss
0
0
4
8
12
16
20
24
28
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance versus Drain–Source Voltage
REV 5
5
10
1
0.1
0
0
1
10
100
VDS, DRAIN VOLTAGE (VOLTS)
Figure 7. DC Safe Operating Area