MRF160 Datasheet, PDF (2/9 Pages) Motorola, Inc – MOSFET BROADBAND RF POWER FET

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VDS = 0 Vdc, VGS = 0 Vdc, ID = 1.0 mA)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 V)
IDSS
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0 Vdc)
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 10 mA)
VGS(th)
Drain Source On–Voltage
(VDS _(on), VGS = 10 Vdc, ID = 500 mA)
VDS(on)
Forward Transconductance
gfs
(VDS = 10 Vdc, ID = 250 mA)
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
(VDS = 28 Vdc, VGS = 0 V, f = 1.0 MHz)
Output Capacitance
(VDS = 28 V, VGS = 0 Vdc, f = 1.0 MHz)
Coss
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Crss
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
Gps
(VDD = 28 Vdc, Pout = 4.0 W, f = 500 MHz, IDQ = 50 mA)
Drain Efficiency
η
(VDD = 28 Vdc, Pout = 4.0 W, f = 500 MHz, IDQ = 50 mA)
Electrical Ruggedness
ψ
(VDD = 28 Vdc, Pout = 4.0 W, f = 500 MHz, IDQ = 50 mA)
Load VSWR = 30:1 at All Phase Angles at Frequency of Test
Series Equivalent Input Impedance
Zin
(VDD = 28 Vdc, Pout = 4.0 W, f = 500 MHz, IDQ = 50 mA)
Series Equivalent Output Impedance
(VDD = 28 Vdc, Pout = 4.0 W, f = 500 MHz, IDQ = 50 mA)
Zout
Min
Typ
Max
Unit
Vdc
65
—
—
mA
—
—
0.5
µA
—
—
1.0
Vdc
1.5
3.0
4.5
Vdc
—
3.8
—
150
220
mS
—
pF
—
6.0
—
pF
—
6.5
—
pF
—
0.8
—
dB
16
18
—
%
50
55
—
No Degradation in Output Power
Ohms
—
6.8 – j21
—
Ohms
—
21 – j28
—
REV 5
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