MRF160 Datasheet, PDF (1/9 Pages) Motorola, Inc – MOSFET BROADBAND RF POWER FET

SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
Power Field Effect Transistor
N–Channel Enhancement–Mode MOSFET
Designed primarily for wideband large–signal output and driver from
30–500 MHz.
• Guaranteed 28 Volt, 500 MHz Performance
Output Power = 4.0 Watts
Gain = 16 dB (Min)
Efficiency = 55% (Typ)
• Excellent Thermal Stability, Ideally Suited for Class A Operation
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 100% Tested for Load Mismatch at All Phase Angles with
30:1 VSWR
• Low Crss – 0.8 pF Typical at VDS = 28 Volts
D
G
S
Order this document
by MRF160/D
MRF160
To 500 MHz, 4 W, 28 V
MOSFET BROADBAND
RF POWER FET
CASE 249–06, STYLE 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–Gate Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
Drain Current–Continuous
Total Device Dissipation @ TC = 25°C
Derate Above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
R_θJC
Value
65
65
± 20
1.0
24
0.14
– 65 to +150
200
7.2
Unit
Vdc
Vdc
Vdc
ADC
Watts
W/°C
°C
°C
°C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
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