MRF317 Datasheet, PDF (4/5 Pages) Motorola, Inc – BROADBAND RF POWER TRANSISTOR NPN SILICON

TYPICAL PERFORMANCE CURVES
17
P_out = 100 W
16
V_CC = 28 V
15
14
13
12
11
10
9
820 _{40 60 80 100 120 140 160 180 200}
f, FREQUENCY (MHz)
Figure 6. Power Gain versus Frequency
120
P_in = 10 W
8W
100
6W
80
60
40
20
12
f = 100 MHz
16
20
24
28
V_CC, SUPPLY VOLTAGE (VOLTS)
Figure 7. Power Output versus Supply Voltage
120
P_in = 10 W
100
8W
6W
80
60
40
20
12
f = 150 MHz
16
20
24
28
V_CC, SUPPLY VOLTAGE (VOLTS)
Figure 8. Power Output versus Supply Voltage
P_in = 10 W
100
8W
80
6W
60
40
f = 200 MHz
20
12
16
20
24
28
V_CC, SUPPLY VOLTAGE (VOLTS)
Figure 9. Power Output versus Supply Voltage
REV 7
4
3.0
2.0
50
1.0
0
Z_in 100
200
1.0²⁰⁰
1^1.2⁰5 _2.0
150
3.0
4.0
f = 30 MHz
175
175
100
2.0
150
125
3.0
Z_OL*
4.0
5.0
50
f = 30 MHz
6.0
Z_OL* = Conjugate of the optimum load impedance into which the device output
Z_OL* = operates at a given output power, voltage and frequency.
V_CC = 28 V, P_out = 100 W
f
Z_in
MHz
OHMS
Z_OL*
OHMS
30
1.2 - j2.0
4.3 - j5.0
50
1.0 - j1.8
4.0 - j4.9
100
0.3 + j0.7
2.0 - j2.3
125
0.3 + j1.0
1.9 - j1.9
150
0.6 + j1.3
1.9 - j1.3
175
1.0 + j1.5
1.6 - j0.6
200
0.9 + j1.0
1.1 - j0.6
Figure 10. Series Equivalent Input–Output Impedance