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MRF317 Datasheet, PDF (1/5 Pages) Motorola, Inc – BROADBAND RF POWER TRANSISTOR NPN SILICON | |||
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SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF317/D
The RF Line
NPN Silicon
RF Power Transistor
. . . designed primarily for wideband largeâsignal output amplifier stages in
30â200 MHz frequency range.
⢠Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 100 W
Minimum Gain = 9.0 dB
⢠BuiltâIn Matching Network for Broadband Operation
⢠100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
⢠Gold Metallization System for High Reliability
⢠High Output Saturation Power â Ideally Suited for 30 W Carrier/120 W
Peak AM Amplifier Service
⢠Guaranteed Performance in Broadband Test Fixture
MRF317
100 W, 30â200 MHz
CONTROLLED Q
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
Collector Current â Continuous
Collector Current â Peak (10 seconds)
VCEO
VCBO
VEBO
IC
35
Vdc
65
Vdc
4.0
Vdc
12
Adc
18
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
PD
270
Watts
1.54
W/°C
Tstg
â65 to +150
°C
CASE 316â01, STYLE 1
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
0.65
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage
(IC = 100 mAdc, IB = 0)
V(BR)CEO
35
â
â
Vdc
CollectorâEmitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
CollectorâBase Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CES
65
â
â
Vdc
V(BR)CBO
65
â
â
Vdc
EmitterâBase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
4.0
â
â
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
â
â
5.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE
10
25
80
â
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
REV 7
1
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