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MRF317 Datasheet, PDF (2/5 Pages) Motorola, Inc – BROADBAND RF POWER TRANSISTOR NPN SILICON | |||
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ELECTRICAL CHARACTERISTICS â continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
Cob
â
150
175
pF
FUNCTIONAL TESTS (Figure 2)
CommonâEmitter Amplifier Power Gain
GPE
9.0
10
â
dB
(VCC = 28 Vdc, Pout = 100 W, f = 150 MHz, IC (Max) = 6.5 Adc)
Collector Efficiency
η
(VCC = 28 Vdc, Pout = 100 W, f = 150 MHz, IC (Max) = 6.5 Adc)
55
60
â
%
Load Mismatch
(VCC = 28 Vdc, Pout = 100 W CW, f = 150 MHz,
VSWR = 30:1 all phase angles)
Ï
No Degradation in Output Power
REV 7
2
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