MRF175LU Datasheet, PDF (4/8 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER FETs

TYPICAL CHARACTERISTICS
5
4
V_DS = 10 V
3
2
TYPICAL DEVICE SHOWN, V_GS(th) = 3 V
1
0
1
2
3
4
5
6
V_GS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 5. Drain Current versus Gate Voltage
(Transfer Characteristics)
1.2
1.1
1
0.9
0.8
-ā25
V_DD = 28 V
I_D = 4 A
3A
2A
100 mA
0
25 50 75
100 125 150 175
T_C, CASE TEMPERATURE (°C)
Figure 6. Gate–Source Voltage versus
Case Temperature
1000
500
C_oss
200
C_iss
100
V_GS = 0 V
f = 1 MHz
50
CC_orssss
20
0
0
5
10
15
20
25
V_DS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance versus Drain–Source Voltage
MRF175LU MRF175LV
4
MOTOROLA RF DEVICE DATA