MRF175LU Datasheet, PDF (3/8 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER FETs

BIAS
C9
.01 mf
R2
R1
C1
IN
L1
Z1
C2
C3
C4
C11 C12
L3
C13 C14
+v
L2
Z2
GND
C8
Z3
OUT
D.U.T.
C5
C6
C7
C1, C8 — 270 pF ATC Chip Cap
C2, C4, C6, C7 — 1.0ā–ā20 pF Trimmer Cap
C3 — 15 pF Mini Unelco Cap
C5 — 33 pF Mini Unelco Cap
C9, C12 — 0.1 µF Ceramic Cap
C11, C14 — 680 pF Feed Thru Cap
C13 — 50 µF Tantalum Cap
L1 — Hairpin Inductor #18 Wire
0.25″
0.4″
L2 — 12 Turns #18 Wire 0.450″ ID
L3 — Ferroxcube VK200 20/4B
Figure 2. 400 MHz Test Circuit
R1 — 10 k 1/4 W Resistor
R2 — 1 k 1/4 W Resistor
R3 — 1.5 k 1/4 W Resistor
Z1 — Microstrip Line 0.950″ x 0.250″
Z2 — Microstrip Line 1″ x 0.250″
Z3 — Microstrip Line 0.550″ x 0.250″
Board Material — 0.062″ Teflon —
fiberglass, ε_r = 2.56, 1 oz. copper
clad both sides
TYPICAL CHARACTERISTICS
4000
100
3000
V_DS = 20 V
2000
10
10 V
1000
0
0
0 2 4 6 8 10 12 14 16 18 20
0
I_D, DRAIN CURRENT (AMPS)
Figure 3. Common Source Unity Current Gain
Frequency versus Drain Current
T_C = 25°C
10
100
I_D, DRAIN CURRENT (AMPS)
Figure 4. DC Safe Operating Area
MOTOROLA RF DEVICE DATA
MRF175LU MRF175LV
3