MRF175LU Datasheet, PDF (1/8 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER FETs

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF175LU/D
The RF MOSFET Line
RF Power
Field-Effect Transistors
N–Channel Enhancement–Mode
Designed for broadband commercial and military applications using single
ended circuits at frequencies to 400 MHz. The high power, high gain and
broadband performance of each device makes possible solid state transmitters
for FM broadcast or TV channel frequency bands.
• Guaranteed Performance
MRF175LU @ 28 V, 400 MHz (“U” Suffix)
Output Power — 100 Watts
Power Gain — 10 dB Typ
Efficiency — 55% Typ
MRF175LV @ 28 V, 225 MHz (“V” Suffix)
Output Power — 100 Watts
Power Gain — 14 dB Typ
Efficiency — 65% Typ
D
• 100% Ruggedness Tested At Rated Output Power
• Low Thermal Resistance
• Low C_rss — 20 pF Typ @ V_DS = 28 V
G
MRF175LU
MRF175LV
100 W, 28 V, 400 MHz
N–CHANNEL
BROADBAND
RF POWER FETs
S
CASE 333–04, STYLE 2
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Symbol
V_DSS
V_GS
I_D
P_D
Value
65
±40
13
270
1.54
Unit
Vdc
Vdc
Adc
Watts
W/°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
T_stg
T_J
Symbol
R_θJC
–65 to +150
200
Max
0.65
°C
°C
Unit
°C/W
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V_GS = 0, I_D = 50 mA)
V_(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(V_DS = 28 V, V_GS = 0)
I_DSS
—
—
2.5
mAdc
Gate–Body Leakage Current
(V_GS = 20 V, V_DS = 0)
I_GSS
—
—
1.0
µAdc
(continued)
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 8
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF175LU MRF175LV
1