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| MRF157 Datasheet, PDF (4/7 Pages) Motorola, Inc – MOS LINEAR RF POWER FET | |||
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4
VDD = 60 V
IDQ = 2 x 800 mA
3
f = 30 MHz
t1 = 1 ms (See Fig. 9)
t2 = 10 ms (See Fig. 9)
2
1
0
0
20
40
60
80
100
Pin, POWER INPUT (WATTS)
Figure 8. Output Power versus Input Power
Under Pulse Conditions (2 x MRF157)
1
D = 0.5
0.5
0.2
0.2
0.1
0.1
0.05
0.05
0.02
0.02
SINGLE PULSE
0.0110-2
10-1
1
RθJC(t) = r(t) RθJC
RθJC = 0.13°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
10
102
103
104
PULSE WIDTH, t (ms)
Figure 9. Thermal Response versus
Pulse Width
Note: Pulse data for this graph was taken in a pushâpull circuit similar
Note: to the one shown. However, the output matching network was
Note: modified for the higher level of peak power.
REV 1
4
f = 100 MHz
60
30
15
7.5 Zin
4.0
VDD = 50 V
IDQ = 800 mA
Pout = 600 W
2.0
Zo = 10 â¦
(VCC â Vsat)2
Note: To determine ZOL*, use formula
2 Po
= ZOL*
Figure 10. Series Equivalent Impedance
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