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MRF157 Datasheet, PDF (3/7 Pages) Motorola, Inc – MOS LINEAR RF POWER FET
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30
800
VDS = 50 V
600
25
400
40 V
20
15
10
VDD = 50 V
IDQ = 800 mA
Pout = 600 W
5
200
0
0
800
600
400
200
4
8
12
16
IDQ = 800 mA
VDS = 50 V
40 V
0
0
1
2
5
10
20
50
100
0
40
80
f, FREQUENCY (MHz)
Pin, INPUT POWER (WATTS)
Figure 2. Power Gain versus Frequency
Figure 3. Output Power versus Input Power
100
5000
Ciss
TC = 25°C
2000
Coss
1000
10
500
200
100
VGS = 0 V
f = 1 MHz
Crss
1
50
2
20
200
1
2
5
10
20
50
100
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 4. DC Safe Operating Area
Figure 5. Capacitance versus Drain Voltage
40
TYPICAL DEVICE SHOWN
30
VDS = 10 V
VGS(th) = 3.5 V
gfs = 24 mhos
20
10
0
0
2
4
6
8
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 6. Gate Voltage versus Drain Current
1.04
1.03
1.02
1.01
1
0.99
0.98
0.97
0.96
0.95
0.94
0.93
0.92
0.91
0.9
-25
ID = 20 A
16 A
8A
4A
0.4 A
1A
0
25
50
75
100
TC, CASE TEMPERATURE (°C)
Figure 7. Gate–Source Voltage versus
Case Temperature
REV 1
3
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