MRF157 Datasheet, PDF (1/7 Pages) Motorola, Inc – MOS LINEAR RF POWER FET

SEMICONDUCTOR TECHNICAL DATA
The RF Power MOS Line
Power Field Effect Transistor
N–Channel Enhancement Mode
Designed primarily for linear large–signal output stages to 80 MHz.
• Specified 50 Volts, 30 MHz Characteristics
Output Power = 600 Watts
Power Gain = 21 dB (Typ)
Efficiency = 45% (Typ)
D
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by MRF157/D
MRF157
600 W, to 80 MHz
MOS LINEAR
RF POWER FET
G
S
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
V_DSS
V_DGO
V_GS
I_D
P_D
T_stg
T_J
Symbol
R_θJC
CASE 368–03, STYLE 2
Value
125
125
±40
60
1350
7.7
–65 to +150
200
Max
0.13
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
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