MRF136 Datasheet, PDF (4/11 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FETs

TYPICAL CHARACTERISTICS
20
18
f = 100 MHz
16
150 MHz
200 MHz
14
12
10
8
6
4
VDD = 28 V
IDQ = 25 mA
2
0
0
200
400
600
800
1000
Pin, INPUT POWER (MILLWATTS)
Figure 2. Output Power versus Input Power
10
9
f = 100 MHz
8
7
150 MHz
6
200 MHz
5
4
3
2
VDD = 13.5 V
IDQ = 25 mA
1
0
0
200
400
600
800
1000
Pin, INPUT POWER (MILLWATTS)
Figure 3. Output Power versus Input Power
20
18
16
f = 400 MHz
IDQ = 25 mA
14
VDD = 28 V
12
10
8
VDD = 13.5 V
6
4
2
0
0
1
2
3
4
Pin, INPUT POWER (WATTS)
Figure 4. Output Power versus Input Power
24
21
Pin = 600 mW
18
15
400 mW
12
200 mW
9
6
IDQ = 25 mA
3
f = 100 MHz
0
12 14 16 18 20 22 24 26 28
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 5. Output Power versus Supply Voltage
24
Pin = 900 mW
21
18
600 mW
15
12
300 mW
9
6
IDQ = 25 mA
3
f = 150 MHz
0
12
14 16 18
20 22
24 26 28
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 6. Output Power versus Supply Voltage
24
21
Pin = 1 W
18
15
0.7 W
12
9
0.4 W
6
IDQ = 25 mA
3
f = 200 MHz
0
12
14 16
18 20
22 24
26 28
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 7. Output Power versus Supply Voltage
REV 7
4