MRF136 Datasheet, PDF (2/11 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FETs

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(VGS = 0, ID = 5.0 mA)
V(BR)DSS
Zero–Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
IDSS
Gate–Source Leakage Current
(VGS = 40 V, VDS = 0)
IGSS
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = 10 V, ID = 25 mA)
VGS(th)
Forward Transconductance
gfs
(VDS = 10 V, ID = 250 mA)
DYNAMIC CHARACTERISTICS (1)
Input Capacitance
Ciss
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Coss
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Crss
FUNCTIONAL CHARACTERISTICS
Noise Figure
NF
(VDS = 28 Vdc, ID = 500 mA, f = 150 MHz)
Common Source Power Gain (Figure 1)
Gps
(VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA)
Drain Efficiency (Figure 1)
η
(VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA)
Electrical Ruggedness (Figure 1)
ψ
(VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA,
VSWR 30:1 at all Phase Angles)
NOTES:
1. Each side measured separately.
Min
Typ
Max
Unit
65
—
—
Vdc
—
—
2.0
mAdc
—
—
1.0
µAdc
1.0
3.0
6.0
Vdc
250
400
—
mmhos
—
24
—
pF
—
27
—
pF
—
5.5
—
pF
—
1.0
—
dB
13
16
—
dB
50
60
—
%
No Degradation in Output Power
REV 7
2