MRF136 Datasheet, PDF (1/11 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FETs

SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power
Field-Effect Transistors
N-Channel Enhancement-Mode MOSFET
Designed for wideband large–signal amplifier and oscillator applications up to
400 MHz range, in single ended configuration.
• Guaranteed 28 Volt, 150 MHz Performance
Output Power = 15 Watts
Narrowband Gain = 16 dB (Typ)
Efficiency = 60% (Typical)
• Small–Signal and Large–Signal
Characterization
• 100% Tested For Load
Mismatch At All Phase
Angles With 30:1 VSWR
• Excellent Thermal Stability,
D
Ideally Suited For Class A
Operation
• Facilitates Manual Gain
Control, ALC and
Modulation Techniques
G
S
Order this document
by MRF136/D
MRF136
15 W, to 400 MHz
N–CHANNEL
MOS BROADBAND
RF POWER FET
CASE 211–07, STYLE 2
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Symbol
R_θJC
Value
65
65
± 40
2.5
55
0.314
– 65 to +150
200
Max
3.2
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 7
1