MRF134 Datasheet, PDF (4/10 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FET

6
V_DD = 28 V
5 _{IDQ = 50 mA}
P_in = CONSTANT
4
3
2
f = 400 MHz
150 MHz
1
TYPICAL DEVICE SHOWN,
V_GS(th) = 3.5 V
0
-2
-1
0
1
2
3
4
5
V_GS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 8. Output Power versus Gate Voltage
500
400
V_DS = 10 V
300
200
100 ^{TYPICAL DEVICE SHOWN,}
V_GS(th) = 3.5 V
00
1
2
3
4
5
6
7
8
V_GS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 9. Drain Current versus Gate Voltage
(Transfer Characteristics)
1.02
50
V_DD = 28 V
1
I_DQ = 200 mA
40
0.98
100 mA
0.96
30
G_MAX =
|S₂₁|²
(1 - |S₁₁|²) (1 - |S₂₂|²)
50 mA
20
0.94
0.92
10 _{VDS = 28 V}
I_D = 100 mAdc
0.9
0
-25
0
25
50
75
100 125 150
1
10
100
1000
T_C, CASE TEMPERATURE (°C)
f, FREQUENCY (MHz)
Figure 10. Gate–Source Voltage versus
Case Temperature
Figure 11. Maximum Available Gain
versus Frequency
28
1
V_GS = 0 V
0.7
24
f = 1 MHz
0.5
20
0.3
16
0.2
T_C = 25°C
0.1
12
C_oss
0.07
0.05
8
C_iss
0.03
4
C_rss
0.02
00
0.01
4
8
12
16
20
24
28
1
2
5
10
20
50 70 100
V_DS, DRAIN-SOURCE VOLTAGE (VOLTS)
V_DS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 12. Capacitance versus Voltage
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
REV 6
4