MRF134 Datasheet, PDF (1/10 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FET

SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode
. . . designed for wideband large–signal amplifier and oscillator applications up
to 400 MHz range.
• Guaranteed 28 Volt, 150 MHz Performance
Output Power = 5.0 Watts
Minimum Gain = 11 dB
Efficiency — 55% (Typical)
• Small–Signal and Large–Signal Characterization
• Typical Performance at 400 MHz, 28 Vdc, 5.0 W
Output = 10.6 dB Gain
• 100% Tested For Load Mismatch At All Phase Angles
With 30:1 VSWR
• Low Noise Figure — 2.0 dB (Typ) at 200 mA, 150 MHz
• Excellent Thermal Stability, Ideally Suited For Class A
D
Operation
Order this document
by MRF134/D
MRF134
5.0 W, to 400 MHz
N–CHANNEL MOS
BROADBAND RF POWER
FET
G
S
CASE 211–07, STYLE 2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
Drain–Gate Voltage
(R_GS = 1.0 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
V_DSS
V_DGR
V_GS
I_D
P_D
65
65
±40
0.9
17.5
0.1
Vdc
Vdc
Vdc
Adc
Watts
W/°C
Storage Temperature Range
THERMAL CHARACTERISTICS
T_stg
–65 to +150
°C
Rating
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R_θJC
10
°C/W
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
1