MRF134 Datasheet, PDF (2/10 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FET

ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (V_GS = 0, I_D = 5.0 mA)
Zero Gate Voltage Drain Current (V_DS = 28 V, V_GS = 0)
Gate–Source Leakage Current (V_GS = 20 V, V_DS = 0)
V_(BR)DSS
I_DSS
I_GSS
ON CHARACTERISTICS
Gate Threshold Voltage (I_D = 10 mA, V_DS = 10 V)
Forward Transconductance (V_DS = 10 V, I_D = 100 mA)
V_GS(th)
g_fs
DYNAMIC CHARACTERISTICS
Input Capacitance
C_iss
(V_DS = 28 V, V_GS = 0, f = 1.0 MHz)
Output Capacitance
(V_DS = 28 V, V_GS = 0, f = 1.0 MHz)
C_oss
Reverse Transfer Capacitance
C_rss
(V_DS = 28 V, V_GS = 0, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure
NF
(V_DS = 28 Vdc, I_D = 200 mA, f = 150 MHz)
Common Source Power Gain
G_ps
(V_DD = 28 Vdc, P_out = 5.0 W, I_DQ = 50 mA)
f = 150 MHz (Fig. 1)
f = 400 MHz (Fig. 14)
Drain Efficiency (Fig. 1)
η
(V_DD = 28 Vdc, P_out = 5.0 W, f = 150 MHz, I_DQ = 50 mA)
Electrical Ruggedness (Fig. 1)
ψ
(V_DD = 28 Vdc, P_out = 5.0 W, f = 150 MHz, I_DQ = 50 mA,
VSWR 30:1 at all Phase Angles)
Min
Typ
Max
Unit
65
—
—
Vdc
—
—
1.0
mAdc
—
—
1.0
µAdc
1.0
3.5
6.0
Vdc
80
110
—
mmhos
—
7.0
—
pF
—
9.7
—
pF
—
2.3
—
pF
—
2.0
—
dB
dB
11
14
—
—
10.6
—
50
55
—
%
No Degradation in Output Power
RF INPUT
R3*
D1
R2
C5
C6
L1
C1
C2
*Bias Adjust
R4
C7
L3
R5
L4
+
C10
C11
C8 C9
-
R1
L2
DUT
C4
C3
+ąV_DD = 28 V
C12
RF OUTPUT
C1, C4 — Arco 406, 15–115 pF
C2 — Arco 403, 3.0–35 pF
C3 — Arco 402, 1.5–20 pF
C5, C6, C7, C8, C12 — 0.1 µF Erie Redcap
C9 — 10 µF, 50 V
C10, C11 — 680 pF Feedthru
D1 — 1N5925A Motorola Zener
L1 — 3 Turns, 0.310″ ID, #18 AWG Enamel, 0.2″ Long
L2 — 3–1/2 Turns, 0.310″ ID, #18 AWG Enamel, 0.25″ Long
L3 — 20 Turns, #20 AWG Enamel Wound on R5
L4 — Ferroxcube VK–200 — 19/4B
R1 — 68 Ω, 1.0 W Thin Film
R2 — 10 kΩ, 1/4 W
R3 — 10 Turns, 10 kΩ Beckman Instruments 8108
R4 — 1.8 kΩ, 1/2 W
R5 — 1.0 MΩ, 2.0 W Carbon
Board — G10, 62 mils
REV 6
2
Figure 1. 150 MHz Test Circuit