MRF429 Datasheet, PDF (3/5 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

250
f = 30 MHz
200 ^{ICQ = 150 mA}
150
100
V_CC = 50 V
40 V
28 V
250
f = 30, 30.001 MHz
200
I_CQ = 150 mA
IMD = d₃
150
100
IMD = -ā30 dB
-ā35 dB
50
50
00
2
4
6
8
10
P_in, INPUT POWER (WATTS)
Figure 2. Output Power versus Input Power
0 ₂₀
30
40
50
60
V_CC, SUPPLY VOLTAGE (VOLTS)
Figure 3. Output Power versus Supply Voltage
30
350
f = 30.000 MHz
25
300
I_CQ = 150 mA
V_CC = 50 V
20
250
15
V_CC = 50 V
200
T_C = 50°C
I_CQ = 150 mA
10
P_out = 150 W
150
100°C
0
1
2
4
7
15
30
60 100 ¹⁰⁰ 1
3 5 10
30 50
f, FREQUENCY (MHz)
OUTPUT VSWR
Figure 4. Power Gain versus Frequency
Figure 5. RF Safe Operating Area (SOAR)
250
200
150
100
50
00
V_CC = 30 V
15 V
5
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 6. f_T versus Collector Current
-ā25
-ā30
-ā35
d₃
d₅
-ā40
V_CC = 50 V
f = 30, 30.001 MHz
-ā45
14
-ā50 ₀
20 40 60 80 100 120 140 160
P_out, OUTPUT POWER (WATTS PEP)
Figure 7. IMD versus P_out
3