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MRF429 Datasheet, PDF (1/5 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON | |||
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SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
Designed primarily for highâvoltage applications as a highâpower linear
amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
⢠Specified 50 Volt, 30 MHz Characteristics â
Output Power = 150 W (PEP)
Minimum Gain = 13 dB
Efficiency = 45%
⢠Intermodulation Distortion @ 150 W (PEP) â
IMD = â32 dB (Max)
⢠Diffused Emitter Resistors for Superior Ruggedness
⢠100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
@ 150 W CW
Order this document
by MRF429/D
MRF429
150 W (LINEAR), 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
Collector Current â Continuous
Withstand Current â 10 s
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage (IC = 200 mAdc, IB = 0)
CollectorâEmitter Breakdown Voltage (IC = 100 mAdc, VBE = 0)
CollectorâBase Breakdown Voltage (IC = 100 mAdc, IE = 0)
EmitterâBase Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
Symbol
VCEO
VCBO
VEBO
IC
â
PD
Tstg
Symbol
RθJC
Min
50
100
100
4.0
CASE 211â11, STYLE 1
Value
50
100
4.0
16
20
233
1.33
â65 to +150
Max
0.75
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
Unit
°C/W
Typ
Max
Unit
â
â
Vdc
â
â
Vdc
â
â
Vdc
â
â
Vdc
(continued)
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