MRF429 Datasheet, PDF (2/5 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (T_C = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I_C = 5.0 Adc, V_CE = 5.0 Vdc)
h_FE
10
30
80
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(V_CB = 50 Vdc, I_E = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
C_ob
—
220
300
pF
Common–Emitter Amplifier Gain
(V_CC = 50 Vdc, P_out = 150 W (PEP), I_C(max) = 3.32 Adc,
f = 30; 30.001 MHz)
G_PE
13
15
—
dB
Output Power
(V_CE = 50 Vdc, f = 30; 30.001 MHz)
Collector Efficiency
(V_CC = 50 Vdc, P_out = 150 W (PEP), I_C(max) = 3.32 Adc,
f = 30, 30.001 MHz)
P_out
150
—
η
45
—
—
W (PEP)
—
%
Intermodulation Distortion (1)
(V_CE = 50 Vdc, P_out = 150 W (PEP), I_C = 3.32 Adc)
Electrical Ruggedness
(V_CC = 50 Vdc, P_out = 150 W CW, f = 30 MHz,
VSWR 30:1 at all Phase Angles)
IMD
—
–35
–32
dB
ψ
No Degradation in Output Power
NOTE:
1. To Mil–Std–1311 Version A, Test Method 2204, Two Tone, Reference each Tone.
R1
+
BIAS
C3
-
+
C4 _-
CR1
L2
RF
INPUT
C2
L1
R3
C1
R2
L3
DUT
L5
C8
L4
C6
+
C9
C10
50 Vdc
-
RF
OUTPUT
C5
C7
C1, C2, C7 — 170ā–ā780 pF, Arco 469
C3, C8, C9 — 0.1 µF, 100 V Erie
C4 — 500 µF @ 6.0 V
C5 — 9.0ā–ā180 pF, Arco 463
C6 — 80ā–ā480 pF, Arco 466
C10 — 30 µF, 100 V
R1 — 10 Ω, 10 Watt
R2 — 10 Ω, 1.0 Watt
R3 — 5.0 – 3.3 Ω 1/2 Watt Carbon Resistors in Parallel
CR1 — 1N4997
L1 — 3 Turns, #16 Wire, 5/16″ I.D., 5/16″ Long
L2 — 10 µH Molded Choke
L3 — 12 Turns, #16 Enameled Wire Closewound, 1/4″ I.D.
L4 — 5 Turns, 1/8″ Copper Tubing, 9/16″ I.D., 3/4″ Long
L5 — 10 Ferrite Beads — Ferroxcube #56–590–65/3B
Figure 1. 30 MHz Test Circuit Schematic
2