MRF421 Datasheet, PDF (3/4 Pages) Motorola, Inc – RF POWER TRANSISTORS NPN SILICON

160
V_CC = 12.5 V
I_CQ = 150 mA
120 ^{TWO TONE TEST:}
f = 30, 30.001 MHz
80
160
IMD = -ā30 dB
I_CQ = 150 mA
120 f = 30, 30.001 MHz
80
40
40
0
0
4
8
12
16
P_in, INPUT POWER (WATTS PEP)
Figure 2. Output Power versus Input Power
0
8
10
12
14
16
V_CC, SUPPLY VOLTAGE (VOLTS)
Figure 3. Output Power versus Supply Voltage
25
-ā20
V_CC = 12.5 V
20
-ā25
I_CQ = 150 mA
f = 30, 30.001 MHz
15
-ā30
10
V_CC = 12.5 V
5
I_CQ = 150 mA
P_out = 100 W PEP
0
1.5 2
3
5
7
10
f, FREQUENCY (MHz)
15 20
Figure 4. Power Gain versus Frequency
-ā35
-ā40
-ā45
30
0
3RD ORDER
5TH ORDER
20
40
60
80
100
120 140
P_out, OUTPUT POWER (WATTS PEP)
Figure 5. Intermodulation Distortion
versus Output Power
40
20
8
T_C = 25°C
4
2
0.8
0.4
1
2
5
10
20
50
100
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. DC Safe Operating Area
30
15
Z_in
7.5
ĂV_CC = 12.5 V
ĂI_CQ = 150 mA
P_out = 100 W PEP
FREQUENCY
MHz
Z_in
Ohms
2.0
5.35 - j2.2
7.5
ă2.8 - j1.9
15
1.39 - j1.1
30
ă0.7 - j0.5
f = 2 MHz
Figure 7. Series Equivalent Impedance
REV 1
3