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MRF421 Datasheet, PDF (2/4 Pages) Motorola, Inc – RF POWER TRANSISTORS NPN SILICON | |||
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ELECTRICAL CHARACTERISTICS â continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE
10
70
â
â
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
Cob
â
550
800
pF
FUNCTIONAL TESTS
CommonâEmitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 100 W, IC(max) = 10 Adc,
ICQ = 150 mAdc, f = 30, 30.001 MHz)
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 100 W, IC(max) = 10 Adc,
ICQ = 150 mA, f = 30, 30.001 MHz)
Intermodulation Distortion (1)
(VCE = 12.5 Vdc, Pout = 100 W, IC = 10 Adc,
ICQ = 150 mA, f = 30, 30.001 MHz)
GPE
10
12
â
dB
η
40
â
â
%
IMD
â
â33
â30
dB
NOTE:
1. To proposed EIA method of measurement. Reference peak envelope power.
R1
+
BIAS
CR1
-
RF
INPUT
C5
C6
L4
C2
L1
C1
R2
C7
L2
D.U.T.
C3
L5
C8
C9
C4
L3
+
C10
12.5 Vdc
-
RF
OUTPUT
C1, C2, C4 â 170ÄâÄ780 pF, ARCO 469
C3 â 80ÄâÄ480 pF, ARCO 466
C5, C7, C10 â ERIE 0.1 µF, 100 V
C6 â MALLORY 500 µF @ 15 V Electrolytic
C9 â 100 µF, 15 V Electrolytic
C8 â 1000 pF, 350 V UNDERWOOD
R1 â 10 â¦, 25 Watt Wirewound
R2 â 10 â¦, 1.0 Watt Carbon
CR1 â 1N4997
L1 â 3 Turns, #16 Wire, 5/16â³ I.D., 5/16â³ Long
L2 â 12 Turns, #16 Enameled Wire Closewound, 1/4â³ I.D.
L3 â 1â3/4 Turns, 1/8â³ Tubing, 3/8â³ I.D., 3/8â³ Long
L4 â 10 µH Molded Choke
L5 â 10 Ferrite Beads â FERROXCUBE #56â590â65/3B
Figure 1. 30 MHz Test Circuit Schematic
REV 1
2
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