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MRF421 Datasheet, PDF (1/4 Pages) Motorola, Inc – RF POWER TRANSISTORS NPN SILICON | |||
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SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
Designed primarily for application as a highâpower linear amplifier from 2.0 to
30 MHz.
⢠Specified 12.5 Volt, 30 MHz Characteristics â
Output Power = 100 W (PEP)
Minimum Gain = 10 dB
Efficiency = 40%
⢠Intermodulation Distortion @ 100 W (PEP) â
IMD = â30 dB (Min)
⢠100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Order this document
by MRF421/D
MRF421
100 W (PEP), 30 MHz
RF POWER
TRANSISTORS
NPN SILICON
MAXIMUM RATINGS
Rating
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
Collector Current â Continuous
Withstand Current â 10 s
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage (IC = 50 mAdc, IB = 0)
CollectorâEmitter Breakdown Voltage (IC = 200 mAdc, VBE = 0)
CollectorâBase Breakdown Voltage (IC = 200 mAdc, IE = 0)
EmitterâBase Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCE = 16 Vdc, VBE = 0, TC = 25°C)
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICES
Symbol
VCEO
VCBO
VEBO
IC
â
PD
Tstg
Symbol
RθJC
Min
20
45
45
3.0
â
REV 1
1
CASE 211â11, STYLE 1
Value
20
45
3.0
20
30
290
1.66
â65 to +150
Max
0.6
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
Unit
°C/W
Typ
Max
Unit
â
â
Vdc
â
â
Vdc
â
â
Vdc
â
â
Vdc
â
10
mAdc
(continued)
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